Abstract
The calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. The LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. The design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. MATLAB and Advanced Design System (ADS) are utilized to design and simulate the LNA. In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. Noise Figure (NF), input matching (S11), gain (S21), IIP3, and power dissipation are 1.46 dB–2.27 dB, −11.25 dB, 13.82 dB, −8.5, and 963 μW, respectively.
Highlights
Low Noise Amplifiers (LNAs) are integral parts of every receiver. ey can be categorized into two divergent classes according to the frequency at which they operate
The LNA is called ultra-wideband (UWB) provided that it works over a series of frequencies. e system working from 3.1 GHz to 10.6 GHz has been considered as an ultrawideband system. e main architecture of both UWB receiver and transmitter is demonstrated in Figure 1. e circuit is comprised of RF band pass filter (RF BPF), Low Noise Amplifier (LNA), Variable Gain Amplifier (VGA), and mixer. e BPF selects the signal between two desired frequencies
The minimum power consumption was obtained by utilizing Chebyshev filter [7]. e best power gain, was obtained by feedback amplifiers [8]
Summary
Received 19 October 2019; Revised 6 January 2020; Accepted 6 February 2020; Published 30 March 2020. E calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. E LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. E design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. MATLAB and Advanced Design System (ADS) are utilized to design and simulate the LNA. TSMC 0.13 μm CMOS process is used in ADS. E LNA is biased with two different voltage supplies in order to reduce power consumption. Noise Figure (NF), input matching (S11), gain (S21), IIP3, and power dissipation are 1.46 dB–2.27 dB, − 11.25 dB, 13.82 dB, − 8.5, and 963 μW, respectively
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