Abstract
In many communication and signal routing applications, it is desirable to have a programmable analog filter. According to this practical demand, we consider the titanium oxide memristor, which is a kind of nano-scale electron device with low power dissipation and nonvolatile memory. Such characteristics could be suitable for designing the desired filter. However, both the non-analytical relation between the memristance and the charges that pass through it, and the changeable V—I characteristics in physical tests make it difficult to accurately set the memristance to the target value. In this paper, the conductive mechanism of the memristor is analyzed, a method of continuously programming the memristance is proposed and simulated in a simulation program with integrated circuit emphasis, and its feasibility and compatibility, both in simulations and physical realizations, are demonstrated. This method is then utilized in a first-order active filter as an example to show its applications in programmable filters. This work also provides a practical tool for utilizing memristors as resistance programmable devices.
Published Version
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