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Abstract
SOS MOSFETs with excellent high speed operation capability (>1GHz) have been designed using computer aided process design techniques and fabricated using state of the art processing technology. The process was optimised for 0.8 to 1.0μm channel length SOS devices. The subthreshold current slope of these devices pushes the theoretical limit at 60 millivolts per decade of current which is further evidenced by ring oscillator single stage delays as low as 85 picoseconds. The leakage current of these devices ranged from 1 to 20 picoamps at 1.0μm channel length as the channel width decreased from 10 to 2μm. Additional data is presented on the channel length and width dependence of the threshold voltage, source-drain breakdown voltage, effective channel mobility, and subthreshold current slope.
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