Abstract
In this work, Ni thin films with different thickness from <TEX>$1,523{\AA}\;to\;9,827{\AA}$</TEX> were deposited for the application of micro thermal flow sensors by a magnetron sputtering and oxidized through annealing at <TEX>$450^{\circ}C$</TEX> with increasing annealing time. The initial variation of resistivity decreased radically with increasing films thickness, then gradually stabilizes as the thickness increases. The resistivity of Ni thin films with <TEX>$3,075{\AA}$</TEX> increased suddenly with increasing annealing time at <TEX>$450{\circ}C$</TEX>, then gradually stabilizes as the thickness increases after the annealing time 9 h. In case of <TEX>$3,075{\AA}\;and\;9,827{\AA}$</TEX> films, the average of TCR values, measured for the operating temperature range of <TEX>$0^{\circ}C\;to\;180^{\circ}C$</TEX>, were <TEX>$2,413.1ppm/^{\circ}C\;and\;4,438.5ppm/^{\circ}C$</TEX>, respectively. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.
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