Abstract
Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30 and 40 for five hours due to crystallization of Ni thin films but the value increased over 45 because of Ni thin film`s oxidation. Resistivity values of Ni thin films were in the range of 10.5 Ωcm/ to 2.8410Ωcm/ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/ to 5,630 ppm/ in the temperature range of 0 ∼150 . The results demonstrate that Ni oxide thin films of annealing treatment at 40 for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.
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