The Dependence of the Preferred Orientation and Piezoelectric Property of Pb(Zr 0.52 ,Ti 0.48 )O 3 (PZT) Thin Film on the Deposition Temperature

Abstract

We investigated the dependence of the preferred orientation and piezoelectric properties of PZT thin films on the deposition temperature using atomic force microscope (AFM). PZT thin films were fabricated on Pt(111)/TiO x /SiO 2 /Si(100) substrates from 250 to 500 by radio frequency (rf) magnetron sputtering and then crystallized at 650 for 10 min. The preferred orientation of PZT thin film was changed from (001) to (110) as the deposition temperature increased. We thought that this tendency was due to the change of both the microstructures of as-deposited PZT thin films and the Pb content. The surface roughness of PZT thin films decreased with the increase of deposition temperature. The maximum amplitude of piezoelectric response of PZT thin films decreased till the deposition temperature increased to 350, while this maximum value decreased up to 450 because of both the increase of the surface roughness and the degradation of the crystallinity.