Abstract
ABSTRACTThe magnetic properties of GaMnN, grown by metalorganic chemical vapor deposition, depend on the addition of dopants; where undoped materials are ferromagnetic, and n -type (Si-doped) and p -type (Mg-doped) films are either ferromagnetic or paramagnetic depending on dopant concentration. The ferromagnetism of this material system seems correlated to Fermi level position, and is observed only when the Fermi level is within or close to the Mn energy band. This allows ferromagnetism-mediating carriers to be present in the Mn energy band. The current results exclude precipitates or clusters as the origin of room temperature ferromagnetism in GaMnN.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
