Possible origin of room-temperature ferromagnetism in undoped GaN epilayers implanted with Mn ions

Abstract

Manganese ions were implanted into unintentionally doped GaN epilayers grown by metal organic chemical vapor deposition (MOCVD). The (Ga,Mn)N and Ga x Mn y phases were formed after Mn-implanted undoped GaN epilayers annealed at 700 and 800 °C. The samples showed ferromagnetic behavior at room temperature with the highest magnetization obtained in the sample annealed at 800 °C. Ferromagnetic signal reduces as annealing temperature increased above 900 °C. It is believed that the room-temperature ferromagnetic property of Mn-implanted undoped GaN epilayers are mainly from (Ga ,Mn)N. The Ga x Mn y phases play a critical role in providing holes and also contribute to increasing the ferromagnetic property.