Abstract
AbstractThe diffusion coefficient of Cd in undoped single crystal CdS has been measured at 850 °C as a function of Cd pressure, pCd, by a radiotracer method. The electrical conductivity of similar CdS samples has also been measured as a function of pCd in the temperature range 660 to 950 °C. It is concluded that the defects V″Cd and Cd are responsible for Cd diffusion at 850 °C and that a satisfactory account of the results can be given in terms of Cd interstitials and vacancies plus a residual shallow foreign donor. A model for the defect structure in CdS at 850 °C is presented in terms of Cd vacancies and interstitials.
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