Abstract
A formula is derived for the electronic Fermi energy of the strongly degenerate mono-crystalline n-type semiconductor thin films. If a set of these films, having equal concentration of conduction electrons, is borne in mind, then the dependence of the Fermi energy (related to the conduction band bottom) upon the film thickness is shown to have a tendency to oscillate, provided that no Tamm levels are present in the forbidden gap. The n-type InSb films are discussed in connection with the topic of this paper.
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