Abstract
The effect of non-parabolic band structure of surface phonons in n-type InSb films has been investigated quantum mechanically in the GHz frequency region. Numerical results show that the amplification coefficient is enhanced for the non-parabolic band structure due to the non-linear nature of the energy band in semiconductors. Moreover, the amplification coefficient depends also on the temperature, the piezoelectric coupling mechanisms, the frequency of sound waves, the electric field, and the thickness of the semiconductor film.
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