Abstract
An oxide layer that covers MBE-ZnTe/GaAs has been removed by a very simple hydrogen (H 2) gas treatment. Intentionally oxidized ZnTe/GaAs samples were exposed to H 2 gas cracked using a tungsten heater located in a ceramic tube. The gas irradiation unit was inserted into the MBE growth chamber through a K-cell port. The diffused RHEED patterns of the oxidized ZnTe surfaces become spotty after exposure to cracked H 2 gas. H 2 treatment changes the half-width of the oxidized ZnTe X-ray rocking curve to correspond to the as-grown sample. After re-growth of ZnTe onto the treated ZnTe surface, the RHEED patterns changed from spotty to streaky. Elimination of the oxide layer on the ZnTe surface by this method requires a longer time than was the case for ZnSe.
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