Abstract

The effect of heat treatments in hydrogen gas and glow discharge and electron cyclotron resonance (ECR) hydrogen plasmas on indium tin oxide (ITO), tin oxide (TO) and aluminum-doped zinc oxide (AZO) has been studied. The AZO films in comparison with the ITO and TO films have been found to be more resistant to these hydrogen treatments. These hydrogen treatments for the ITO and TO films lead to a chemical reduction with a colouring and then the vaporization of the corresponding metals. In contrast, the AZO films exhibit no colouring because of simultaneous development of the reduction and the vaporization. It is found that treatments utilizing the ECR hydrogen plasma are useful as a low temperature dry etching process for various transparent conducting oxide films.

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