Abstract

In this paper, we have established a d.c. circuit model of a MOS magnetic sensor. The elements of the model, such as input resistance, output resistance, offset voltage source and Hall voltage source, have also been extracted by a new experimental method. With the model, we can analyse the complete characteristics of a MOS magnetic sensor to help us design the post-circuit for signal processing. From our experiments, we find that the output resistance and input resistance are always inversely proportional to the gate bias. The model can facilitate the computer-aided design of device and analog circuits in the SPICE environment for MOS magnetic sensors.

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