Abstract
The Czochralski growth of Dy3+-doped (Lu1−xGdx)2SiO5 solid solution single crystals with different mixtures of Lu2SiO5 and Gd2SiO5 oxides (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) is reported. It was found that the (Lu1−xGdx)2SiO5 crystals retain structural, physical, and optical properties of Lu2SiO5 even for x = 0.8. Optical investigation of Dy:(Lu1−xGdx)2SiO5 revealed that the structural disorder of the host brings about a strong inhomogeneous broadening of Dy3+ spectral bands while influencing weakly rates of its radiative and nonradiative transitions. Dielectric characteristics of solid solution crystals are presented and discussed. Finally, (Lu1−xGdx)2SiO5 solid solution crystals seem to be an attractive alternative to a Lu2SiO5 host for the design of novel phosphors, radiation converters, and lasers owing to a significantly lower melting temperature and hence easier and less expensive manufacturing.
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