Abstract
Publisher Summary There has been a high level of interest in the electron-coupled-phonon spectrum of pure Nb especially since the discovery that nearly structurally perfect single crystal Nb-substrate junctions with niobium oxide barriers formed either by in situ thermal oxidation or by acid etching techniques yield anomalous value. This chapter discusses the method of fabrication of the single crystal junctions and the experimental procedures that are followed during the entire process, but it presents and discusses data only for a particular Nb-O-In junction. The proximity junction model is incorporated to diffuse scattering in the normal layer. Fabricated proximity junctions are characterized by definable parameters. A precise and unique fit using the single crystal Nb model is used to determine highly accurate conductance data, which is not available for either the very low or very high bias regions.
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