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Abstract
Na0.5Bi0.5Ti1−xZnxO3−δ (NBTZnx, x=0.005–0.04) thin films were deposited on indium tin oxide coated glass substrates by metal organic decomposition combined with sequential layer annealing. The effects of Zn2+ doping content on crystallization and dielectric tunability were mainly studied. All the thin films crystallize into a single perovskite structure with random orientation. Compared with the other films, the NBTZn0.01 film exhibits a high dielectric constant and strong nonlinear dependence of the dielectric constant on applied field due to its well-crystallization and high densification. Furthermore, the effects of the electric field and frequency on the dielectric constant-electric field characteristic for NBTZn0.01 film are discussed. The results show that NBTZn0.01 thin film with an enhanced dielectric tunability of 39% can be a lead-free candidate for tunable component.
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