Abstract

Laser-melted tracks were produced on AlSi samples containing between 15.5 and 26 wt% Si with the resultant solidification rates being measured by taking a longitudinal section through the centre of the laser trace. The Al-rich boundary of the coupled zone, i.e.the growth rate-concentration limit at which the transition from fibrous AlSi eutectic to α-Al dendrites plus interdendritic eutectic takes place, has been experimentally determined for concentrations of Si varying from 15.5 to 20 wt%. Supposing that the growing structure, for a given growth rate, is the one having the higher growth temperature, good agreement is found with the more recent microstructural growth models when kinetic effects are taken into account. For concentrations of Si higher than 20 wt%, primary Si crystals imbedded in equiaxed eutectic grains are observed which replace columnar eutectic and dendritic growth.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.