The Cost-Efficient Gating Drivers with Master-Slave Current Sharing Control for Parallel SiC MOSFETs

Abstract

SiC MOSFET has shown its great potential in the transportation fields. In high power scenario, several SiC MOSFETs need to be in parallel to extend current capability. However the currents of the parallel SiC MOSEFTs are hard to be shared due to the fast switching and individual differences. This paper proposes a master-slave gating driver for current-sharing control of parallel SiC MOSFETs. The master SiC MOSFET's gating voltage is sensed and used as a reference, while the rest slave SiC MOSFETs' gating voltages track to the reference by closed-loop effects. Such a solution is cost-efficient since only one traditional gating driver and several amplifiers are required. With the proposed driver, the transient currents of master and slaves SiC MOSFETs can be well shared. With the proposed driver, the current of the master SiC MOSFET can also be optimally controlled to enhance the overall reliability. The validity of design is verified by experiments.