Abstract
The channel mobilities of InP MOSFETS fabricated using three different types of insulator (viz. Al 2O 3, as deposited SiO 2 and annealed SiO 2.) have been measured. The interface state densities for each type of insulator-InP interface have been determined by the conductance technique. The results have been compared and a strong correspondence has been found between low interface state density and high channel mobility. A drastic reduction in interface state density was produced by annealing the SiO 2 insulator at high temperature and this process also produced transistors with the highest mobility.
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