Abstract
In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.
Highlights
Investigations of the effects of fast electrons irradiation on the electrical properties of InP are of scientific and practical interest
The activation energy is estimated by the high temperature of part E = 0.12 eV which is in good agreement with literature data [1]
We have found that after irradiation of n-InP crystals with 6 MeV electrons, there arise disordered regions with a space charge, radiation—induced charged defects
Summary
Investigations of the effects of fast electrons irradiation on the electrical properties of InP are of scientific and practical interest. From the scientific point of view, such investigations give information about the origin of radiation—induced defects in InP. It should note the technology of fabrication of transistors, solar elements and solar cells on InP. The introduction of high-energy ions in the crystal impurities is accompanied by disordering of the crystal lattice. For elimination of radiation defects and electrical activation impurities, annealing crystals were applied
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