Abstract
Etching and electrochemical behaviors of n & p InP are studied in acidic bromine solutions. We observe very similar behaviors as the ones observed for GaAs. Surface analysis performed by XPS detects that very complex oxidation processes are generated at the interface during the etching process. The presence of these oxide phase points out that we have to consider the classical chemical attack proposed in the literature but also electroless contribution which is intimately associated to the global process.
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