Abstract
Abstract Surface state charge Qss associated with the silicon/silicon dioxide interface is shown to consist of three distinct component charges : mobile charge, fixed charge and interface state charge. The dependence, of the density of these charges, upon oxidation temperature, oxygen pressure and oxide thickness is reported. The results indicate that mobile charges are extrinsic to the oxide, while fixed charges and interface state charge are intrinsic to the oxide. Interface state charge is shown to consist of two distinct components, one of which is associated with the fixed charge density
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