Abstract
This paper describes the combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFETs. Devices subjected to a 60-min, 400/spl deg/C, 10% deuterium/90% nitrogen anneal after silicidization show a 32/spl times/ improvement in hot-electron lifetime. These same devices are then passivated with a deuterated barrier-nitride layer formed using deuterated ammonia (ND/sub 3/) and conventional silane (SiH/sub 4/). Further deuterium anneals along with conventional contact and metal-level processes are used to integrate the devices. Hot-electron stressing and SIMS analysis performed at various points in the processing give insight to methods of retaining the beneficial effects of deuterium during subsequent thermal processing.
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