Abstract
The etching characteristics of , , , and a multilayered structure in aqueous solutions have been studied using films grown by metal‐organic chemical vapor deposition on 2° misoriented (100) . The dissolution rate of the films was found to be linearly dependent on the ratio of the etchant, indicative of a kinetically controlled process. In terms of the mesa etching of II–VI heterostructures, the optimum range of solution composition was , allowing the definition of structures with minimum dimensions approaching 1 μm. Quantitative analyses of the etched films by XPS have compared the effects of different ratios on the formation of nonstoichiometric surface layers.
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