Abstract
Many studies have reported CH3NH3SnI3-based solar cell having CZTS as hole transporter. In this paper, we have presented for the first time, an intensive analysis on CZTS-based solar cell device performance which has CH3NH3SnI3 as hole transporter. The proposed solar cell configuration is CH3NH3SnI3/CZTS/CdS/ZnO/AZO. The device optimization is performed in terms of layer thickness, carrier concentration, defect density, electron affinity, series resistance and shunt resistance. During optimization process, analysis of evolution in band structure, electric field, recombination rate and generation rate is utilized to provide proper explanation of device behavior. Finally, device is shown to perform very efficiently and reach highest efficiency value of 37.12 %. This sets up a new record in the history of theoretical development of CZTS-based solar cells. Moreover, it can be noted that the proposed experimentally-achievable solar cell has the potential to exceed the Shockley–Queisser limit for single-junction CZTS solar cells (32.1 %). The choice of CH3NH3SnI3 as an HTL in CZTS-based solar cell significantly enhances the electric field generation and substantially suppresses the recombination rate. Furthermore, the grace of series resistance optimization is discovered to lead to a very highly efficient device that performs beyond Shockley–Queisser limit.
Published Version
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