Abstract
In this work, Ge nanocrystals (nc-Ge) embedded in SiO2 thin films have been synthesized by ion implantation. Both the higher and the lower implantation dose/energy samples exhibit significant memory effect as a result of charge trapping in the nc-Ge. Under a negative gate voltage, either electron trapping or hole trapping dominates, depending on the magnitude of gate voltage and charging time as well as the distribution of nc-Ge. However, under a positive gate voltage, only electron trapping is observed, and the flat-band voltage shift is also affected by the nc-Ge distribution. These results demonstrate that the unconventional memory effect can be modulated by the distribution of nc-Ge.
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