Abstract
The first photosensitive n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 structures are produced by a vacuum sublimation of copper phthalocyanine onto the surface of thin p-Cu(In,Ga)Se2 films and a subsequent magnetron deposition of n-ZnO:Al films. The steady-state current-voltage characteristics of the resulting structures are studied. The charge-transport and photosensitivity mechanisms of the thin-film structures are discussed. The structures appear promising for the fabrication of wide-range (1.2–3.3 eV) thin-film photoelectric converters.
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