Abstract
The charge islands SOI LDMOS with Back-side Etching technology structure is proposed. The new structure features the equally spaced charge islands of the upper LDMOS and a back-side etched structure of the lower LDMOS. A series of equidistant high concentration N+ regions are formed at the upper SOI LDMOS by the ion implanting method. The breakdown voltage of the device is improved due to dielectric field enhancement and the interaction of charges. The results show that the breakdown voltage is increased from 210V to 615V (192.8% enhanced), compared to the conventional LDMOS. The on-resistance of the as-studied stacked SOI LDMOS reduces from 48.2 Ω⋅mm2 to 37.23 Ω⋅mm2 comparing with conventional charge islands device, leading to a reduction ratio of 22.7%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
