Abstract
Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> films. La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.
Highlights
In the past decades, many experimental and theoretical studies were blessed to the study of perovskite materials because of their interesting ferroelectric, Piezoelectric, and dielectric properties [1,2,3]
We evaluated the effect of the annealing temperature on the crystalline status and morphology of the LTO films deposited by Pulsed Laser Deposition on Si substrate under different temperatures
The thickness of the LTO thin films deposited at the three different temperatures has been measured using profilometer Dektak XT. the thickness of the LTO thin films was found to be decreased by increasing the annealing temperature, Because the deposited particles enhanced their energy from the substrate and become more active as the resulting of increasing their motions with the temperature, appearing as the thinner thickness of these films [23] which is an inversely proportional relationship
Summary
Many experimental and theoretical studies were blessed to the study of perovskite materials because of their interesting ferroelectric, Piezoelectric, and dielectric properties [1,2,3]. La2Ti2O7 is a part of the layered perovskite family [11], which has the highest Curie temperature with excellent piezoelectric and electro-optic properties. This makes LTO thin films a powerful candidate for a variety of applications in electrical and optical devices [12, 13]. We evaluated the effect of the annealing temperature on the crystalline status and morphology of the LTO films deposited by Pulsed Laser Deposition on Si substrate under different temperatures
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