The Characteristics of Slow and Fast Interface States in Fluorinated Metal Oxide Semiconductor Devices

Abstract

In this paper the results of the interface state characterization by means of electrical measurements are presented for fluorinated metal oxide semiconductor devices. A new technique has been developed to separate slow and fast interface states. The effect of implanted fluorine on the generation of these interface states is discussed. The optimum implant dose was found to be 1014 F+/cm2 to suppress the generation of these interface states by electron injection. These states near the interface were largely annealed out during and after charge injection at elevated temperatures.