Abstract
We investigate the characteristics of Cu2O thin films deposited through the addition of N2 gas. The addition of N2 gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase (6CuO·Cu2O) appears at a N2 flow rate of 1 sccm, and a Cu2O (200) phase is then preferentially grown at a higher feeding amount of N2. The optical and electrical properties of Cu2O thin films are improved with a sufficient N2 flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of 1.5×10−2 S/cm are obtained. These high‐quality Cu2O thin films are expected to be applied to Cu2O‐based heterojunction solar cells and optical functional films.
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