Abstract
In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.
Highlights
Oxide semiconductor materials have attracted considerable research in recent years due to their functions such as high transparency [1,2], flexibility [3,4], and low processing temperature [5]
Even though Zinc oxide (ZnO) holds the edge as a candidate for device applications, innate defects such as oxygen vacancies and zinc interstitial, which may affect the performance of the device, cannot be ignored
We demonstrate thin film transistors with channel layers of aluminumgallium-zinc-oxide (AGZO) with different ratios of ZnO and aluminum-gallium oxide (AGO)
Summary
Oxide semiconductor materials have attracted considerable research in recent years due to their functions such as high transparency [1,2], flexibility [3,4], and low processing temperature [5]. Owing to the advantages above, oxide semiconductors have been considered as high-performance thin film transistor (TFT) application candidates. Zinc oxide (ZnO), a II-VI compound semiconductor, has been widely reported for several advantages such as low toxicity, high conductivity, low cost because of its abundance on earth, large bandgap of 3.37 eV, and so on [6,7,8,9,10]. Even though ZnO holds the edge as a candidate for device applications, innate defects such as oxygen vacancies and zinc interstitial, which may affect the performance of the device, cannot be ignored. Other alloy oxide compounds such as ZTO [12], IGZO [3,13], ITZO [14,15], AZO [16,17], GZO [18,19] etc. have been published
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