Abstract
A nonvacuum thin-film deposition technology called ultrasonic spray pyrolysis deposition method is used to deposit fluorine-doped tin oxide, Al2O3, and TiO2 thin films, both of which are further applied on the anatase TiO2-based thin-film phototransistors (PTs). The material characteristics of the anatase TiO2 such as selected area electron diffraction, X-ray photoelectron spectroscopy, photoluminescence spectrum, and deep-level transient spectroscopy are investigated. The anatase TiO2-based thin-film PTs have a maximum output current of 4.56 mA/mm, subthreshold swing of 171 mV/dec, and threshold voltage of 0.7 V. The photoresponse characteristics of the anatase TiO2-based thin-film PTs at different quiescent-points are measured and investigated. It is found that the present anatase TiO2-based thin-film PTs can be operated in three different modes depending on the $\text{V}_{\text {DS}}$ and $\text{V}_{\text {GS}}$ biasing. In high-responsivity mode, the responsivity is 32.06 A/W; in high detectivity mode, the detectivity is $1.98 \times 10^{10}$ Jones; and in high ultraviolet (UV)-to-visible rejection ratio mode, the UV-to-visible rejection ratio is 1600.
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