Abstract

Fluorine-doped tin oxide (FTO) thin films were prepared, at different substrate temperatures, using dilute precursor solutions of di(n-butyl)tin(iv) diacetate (0.1M DBTDA) by varying the F− concentration in the solution. It is noticed that conductivity of FTO film is increasing by increasing the fluorine amount in the solution. Morphology of SEM image reveals that grain size and its distribution are totally affected by the substrate temperature in which conductivity is altered. Among these FTO films, the best film obtained gives an electronic conductivity of 31.85×102Ω−1cm−1, sheet resistance of 4.4Ω/□ (ρ=3.14×10−4Ωcm) with over 80% average normal transmittance between the 400 and 800nm wavelength range. The best FTO film consists of a large distribution of grain sizes from 50nm to 400nm range and the optimum conditions used are 0.1M DBTDA, 0.3M ammonium fluoride, in a mixture of propan-2-ol and water, at 470°C substrate temperature. The large distribution of grain sizes can be easily obtained using low DBTDA concentration (~0.1M or less) and moderate substrate temperature (470°C).

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