The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

Abstract

The channel temperature dependence of the drain current transient responses of AlGaN/GaN HEMTs are studied by experimental measurement and simulation. The relationship between the channel transient temperature rise and drain current drop are discussed in detail. The results show that the temperature is the main factor for the drain current decrease. Two shoulders exist on the transient drain current response curve. The time for the shoulders appear depends on the thermal time constant, which is 10 ms and 60 s in the case. The decrease of transient drain current and transient temperature rise have a complementary relationship. Furthermore, the measurement results are found to be consistent with the electro-thermal simulation results.