The change of atomic distribution and hardness by nitrogen implantation into aluminum alloy

Abstract

Through many studies of the nitrogen implantation into aluminum alloy, researchers have concluded that AlN (aluminum nitride) formation is the key to hardening the aluminum surface. We implanted nitrogen ions into the Al6061, using an ion implanter which has a modified Bernas ion source. We changed the incident ion energies (25 keV, 50 keV) and fluences (1x10(17)-2x10(18) ions/cm(2)). To measure the depth hardness of implanted samples, we used nanoindentation test. The test results showed that the hardness of the implanted sample increased as the incident ion fluence increased until 1x10(18) ions/cm(2). However, the hardness did not increase at the fluence of 2x10(18) ions/cm(2). Furthermore, another result showed that the hardness was slightly decreased. To see the depth distribution of elements, we used Auger electron spectroscopy (AES) analysis with depth profiling. Through the AES analysis, we observed that the nitrogen atomic ratio did not increase; since the atomic ratio reached its maximum point (50%), the depth profile formed a flat curve in the AES. It is determined by the AlN structure (1:1 combination), that is, by the stoichiometrical rule. The nitrogen atoms diffused to the inner and outer sides rather than made a narrowly ranged accumulation. We observed that the flat curve was lowered downward a little at the fluence of 2x10(18) ions/cm(2). Observing the atomic distribution of oxygen in AES, we could conclude that the lowered curve was due to the recoil implantation of oxygen which had been originally combined with the aluminum surface in the aluminum oxide (Al(2)O(3)) layer. Comparing the AES result and the nanoindention result, we concluded that the recoiled oxygen atoms are not effective on hardening the Al surface. In this study, we observed the tendency to stop increasing the samples' hardness over the ion fluence of 1x10(18) ions/cm(2). We observed the saturation of the atomic ratio by the stoichiometrical rule.