Abstract
The strain state of Si1‐xGex/SiO2 dummy structures on FDSOI wafers is non‐destructively characterized by HRXRD reciprocal space mapping. A transition from biaxial to uniaxial strain is detected on narrow condensed Si1‐xGex lines with shallow trench isolation (STI), revealing an increasing in‐plane elastic strain relaxation perpendicular to the trenches with decreasing line width, but no strain relaxation parallel to the trenches. The degree of crystallinity of Si1‐xGex lines degrades with increasing annealing temperature and time. An additional elastic strain reduction appears in the direction parallel to the STI trenches after deposition of source‐drain Si1‐yGey islands between dummy gates. The separation of the Si1‐xGex peaks from Si1‐yGey remains unresolved if x and y are close to each other.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
