The carrier mobility and sizable bandgap influorinated armchair boron nitride nanoribbons

Abstract

The electronic transport properties of two-dimensional materials are strongly influenced by the charge carrier mobility and the energy bandgap. Furthermore, the carrier-phonon interaction governs the electrical response of any electrical device at a specific temperature. In light of this, the electron mobility and energy bandgap of fluorine (F) doped armchair Boron Nitride nanoribbons (a-BNNRs) are computed theoretically and analysed further. The acoustical deformation potential (ADP) scattering mechanism is taken into account to determine the mobility of the system. The calculations are carried out in presence of an applied electric field as well as different doping concentrations across a specified temperature range (200–300 K). The computed value of electron mobility for F-BNNR is of the order 104 cm2 V−1 s−1. Such higher magnitude of electron mobility suggests the semiconducting nature of BNNRs. Moreover, the variation of electron mobility as a function of temperature and doping concentration demonstrates a significant reduction in the acoustical phonon-limited electron mobility of fluorine-doped boron nitride nanoribbons. To estimate the energy bandgap, a set of equations are determined from the Fermi velocity expression using the nearly free electron (NFE) model. The computed energy bandgap is found to diminish with the increasing size of the nanoribbon. This behaviour of F-doped a-BNNRs envisages its applications in Visible-IR optical sensors.