The calculation of the reflection coefficients by analyzing resistivity data of the Ni–Si silicide films formed at 850 °C by RTA

Abstract

The total electrical resistivity measurements of the Ni–Si silicide films, with thicknesses of 37–400nm have been carried out as a function of temperature and film thickness in a wide temperature range of 100–900K. The temperature-dependence of the total resistivity of the films shows unusual behavior. The total resistivity of the Ni–Si silicide films in this work increases linearly with temperature up to a Tm temperature, thereafter decreases rapidly and finally reaches zero.We have shown that in the temperature range of (100−Tm)K, linear variation of resistivity of the films with temperature has been caused from both grain-boundary and electron–phonon scattering, dominating simultaneously. That is why, resistivity data could have been analyzed in terms of the Mayadas–Shatzkes (M–S) model. R reflection coefficients have been calculated by analyzing resistivity data of the films using M–S model. Based on our analysis, for a given temperature R increases with decreasing thickness, whereas it is almost constant over the three-thickness ranges, defined as 400–162nm, 105–60nm and 42–37nm, over which silicide films have almost same phases. For room temperature, theoretical and experimental reflection coefficients are calculated to be Rth=0.75, Rth=0.92, Rth=0.96 and Rexp=0.85, Rexp=0.93, Rexp=0.96 by taking an average over the three-thickness ranges, respectively.