Abstract
In a heavily doped semiconductor the optical band gap increases due to the Pauli principle. In this paper the properties of Hg0.8Cd0.2Te are discussed using Thomas-Fermi theory which is shown to be appropriate. An expression for the Burstein-Moss shift is derived and related to the position of the transmission edge. The width of the transmission edge is shown to be a function of temperature, doping and variations in the local x-composition. Experimental results are presented to support the results of these calculations.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call