The Bonding Forming Simulation and Reliability Research of the Flip-Chip Stacked Gold Stud Bump

Abstract

The finite element model of the bonding forming for 3-D flip-chip stacked gold stud bumps was set up, and the bonding process of stacked gold stud bump was simulated by controlling the bonding conditions of pressure, power, and time. Then, the height and diameter of stacked gold stud bumps with 16 groups of different bonding parameter level combinations designed by the orthogonal experiment method were obtained by simulation of the model, and the simulation data were processed using the range analysis and the variance analysis. Samples corresponding to the above 16 groups of different bonding parameter level combinations were made and had a thermal cyclic loading experiment for reliability analysis. The results are shown as follows: The bonding pressure has the largest effect on the height and diameter of stacked gold stud bump, less effect on bonding power, and the least effect on bonding time; the bonding pressure has a significant effect on the height and diameter of stacked gold stud bump with 95% confidence, but does not have on the bonding power and time.