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Abstract
Amorphous silicon carbide (a-SiC) was deposited onto fused silica by a chemical vapour deposition using gaseous mixtures of SiH 4, CH 4 and H 2. Bond structure, optical band gap, and resistivity were studied as functions of the deposition temperature and the input gas ratio (CH 4:SiH 4). In this paper, the deposition temperature is found to be an important factor in determining the measured bond structure, optical properties and electrical properties of chemically vapour-deposited a-SiC. As the deposition temperature increases, the structure of the a-SiC deposits becomes more ordered and the amount of hydrogen bonded to silicon atoms decreases. The optical band gap of a-SiC films lies in the range 2.0–2.9 eV and decreases with an increase in deposition temperature. For a-SiC films produced at deposition temperatures near 700°C, the resistivity is maximized. The input gas ratio has little effect on the optical band gap and resistivity compared with that of the deposition temperature.
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