Abstract
A measurement system based on crack-opening method has been developed to measure the fracture toughness of silicon direct bonding wafers. The theory of crack-opening method was introduced and amended according to the shape of the specimen. The parameters and function required in the measurement of bond energy were mentioned, and the selection principle of thickness of the razor was given. A new experimental device based on IR vision and image processing in the measurement was developed. Finally, a contrast experiment was carried out successfully and the error of the method was analyzed which validated the feasibility and the localization of the method.
Published Version
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