Abstract
The discussion in the preceding chapter revealed two properties of the pn junction that are basic to bipolar transistor action: a) When a small forward bias voltage (0 < V F < 1V) is applied to the junction, minority carriers are injected into both sides of the junction, giving rise to a relatively large forward current. b) When a low to moderate reverse bias voltage (V R < breakdown voltage) is applied to the junction, a very small leakage current is measured through the junction.
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