The bipolar quantum drift-diffusion model

Abstract

A fourth order parabolic system, the bipolar quantum drift-diffusion model in semiconductor simulation, with physically motivated Dirichlet-Neumann boundary condition is studied in this paper. By semidiscretization in time and compactness argument, the global existence and semiclassical limit are obtained, in which semiclassical limit describes the relation between quantum and classical drift-diffusion models. Furthermore, in the case of constant doping, we prove the weak solution exponentially approaches its constant steady state as time increases to infinity.