Abstract
The bias- and temperature-dependent magnetoresistance (MR) effect is theoretically investigated in a magnetically modulated nanostructure, which can be realized experimentally by depositing two parallel ferromagnetic strips on the top and bottom of a semiconductor heterostructure. It is found that a considerable MR effect can be achieved due to the quite distinct conductance difference for electrons through the parallel and antiparallel magnetization configurations. It is also found that the MR effect depends not only on the temperature, but also on the applied bias, thus may leading to bias- and temperature-tunable MR devices.
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