Abstract
Local mode absorption measurements have been made on GaAs and GaP grown by the LEC technique. In n-type crystals boron impurities are not incorporated exclusively on gallium sites. A new defect involving a single boron atom of tetrahedral symmetry has been found and is designated as a B(2) centre. Pairing of these centres with group VI donors and silicon donors has been observed and it is concluded that the B(2) centre is an acceptor. On the basis of the available data it seems most likely that the B(2) centre is a B(V) defect (antistructure), but a possible alternative is that it is a boron atom in an interstitial site. In either case, the results are important in relation to the structure on non-stoichiometric crystals.
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