Abstract
The authors assess the photovoltaic effect and sensitivity gallium arsenide and gallium phosphide films under exposure to x radiation for their possible application in x-ray semiconductor detectors. Their properties are measured against those of cadmium telluride and antimony selenide. The latter films were found to be sensitive to x radiation only in air whereas the gallium compounds demonstrated sensitivity both in air and in vacuum. Processing requirements were also found to be less demanding for gallium arsenide and gallium phosphide.
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