Abstract
The properties of Hg 1- x Cd x Te epitaxial layers grown from doped Hg-rich melts are examined. Selected dopants were added to large (∽2.5 kg) Hg-rich melts from which liquid phase epitaxial (LPE) layers were grown on <111 >-oriented single crystals of CdTe via ramped vertical dipping. The layers were characterized for impurity concentration distributions by Hall effect measurements and by secondary ion mass spectroscopy (SIMS). Segregation coefficients, carrier types, activities, and activation energies were also measured for many of the dopants. A table which summarizes the significant results is presented. The most promising dopants for this melt system are indium for n-type layers, and arsenic or antimony for p-type layers. Functioning infrared focal plane arrays have been fabricated on double-layer heterostructures grown from doped Hg-rich melts.
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